Cree Invests $1 Billion in Expanding SiC Semiconductor Fab Capacity, Develops MOSFET Portfolio
Date:2019-05-24 11:34:15 Posted by:mrpower View:321At the recent PCIM show, Wolfspeed announced its line of SiC bare dies and MOSFETs, and augmented its line of SiC Schottky diodes. The company also introduced its XM3 power module specifically designed for SiC.
Wolfspeed’s portfolio of SiC (silicon carbide) bare dies, discrete components, and modules were reportedly conceived with the requirements of electric vehicle, industrial, and renewable energy applications in mind. The company’s stated goal is to allow designers to achieve the highest power density in high power applications.
According to Cengiz Balkas, SVP and general manager of Wolfspeed, “Wolfspeed is at the forefront of innovation and leading the power industry’s transition from silicon to silicon carbide.”
for more details, see https://www.allaboutcircuits.com/news/Cree-silicon-carbide-semiconductor-technology-fab-MOSFET-diode-portfolio/
BACKComments: 1
-
mrpowerIn my recent talk with vendors of GaN devices at exhibitions, I learned that one of the limitations of SiC devices is that they require special wafer that is different from traditional Si wafer, while GaN device uses the same wafer as the traditional Si devices, thus they claim the total capacity of SiC is limited by the availability of the special wafer which will lead to shortage and high price of SiC devices as they become popular. I am no expert in devices and might not said exactly right, but what I put here should roughly reflect what they told me.
0Reply
