The 70mΩ pure enhancement mode device is manufactured on a qualified GaN-on-Si substrate technology that has in excess of 50% smaller die area, 10x lower gate charge (Qg), and eliminates the body diode reverse recovery charge (Qrr) of traditional silicon MOSFET technology. Additionally, the company’s aGaN technology’s low on-state gate leakage allows engineers to drive the transistor with a selection of commercially available Si MOSFET gate drivers.  

The 650V transistor is available in a low inductance thermally enhanced DFN8x8 package, which has a large thermal pad for heat removal and a separate driver sense pin for controllable switching speed.

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