STGAP2SiCS from STMicroelectronics is a highly optimized galvanically isolated gate driver that operates from a high-voltage rail up to 1200V and ensures safe control of Silicon Carbide (SiC) MOSFETs. Housed in a wide-body SO-8W package that ensures 8mm creepage within a compact footprint, the STGAP2SiCS is loaded with smart features.

The device is capable of producing a gate-driving voltage up to 26V, and it has raised the Under-Voltage Lockout (UVLO) threshold of 15.5V to meet the turn-on requirements of SiC MOSFETs. The driver features dual input pins that let designers determine the gate-drive signal polarity and its driving voltage is too low, which can be caused by the low supply voltage.

Its 4A output-sink/source capability is suited to mid-and high-power converters, power supplies, and inverters in equipment such as high-end home appliances, industrial drives, fans, induction heaters, welders, and UPSes. With 6kV of galvanic isolation between the input section and the gate-driving output, the STGAP2SiCS helps ensure safety in consumer and industrial applications.

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