ISSCC 2021: Integrated GaN gate drive switches mains power at >100V/ns
Date:2021-02-23 23:35:12 Posted by:coowa View:61GaN power transistors are becoming the gold standard for fast compact mains power switching – GaN HEMTs have no reverse recovery charge and can be designed with low on-resistance and low parasitic capacitance.
For more information visit https://www.electronicsweekly.com/news/design/isscc-2021-integrated-gan-gate-drive-switches-mains-power-100v-ns-2021-02/
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