Transphorm’s fifth generation of gallium nitride (GaN) FET outperforms standard Silicon carbide (SiC) solutions in power, design flexibility, and performance for electric vehicle (EV) systems.

GaN and SiC-based devices have taken the electronic world by storm. In high voltage, high-density instances, silicon alone is not up to the task. Semiconductor manufacturers such as Transphorm have looked to GaN technology to enhance performance and design flexibility in various applications. 

Back at the beginning of the global pandemic, around the end of March, Transphorm announced a new strategic partnership with Marelli, an independent supplier with technology that supports 48V to 800V electric powertrain systems. This collaboration has one goal, to design new GaN-based solutions such as on-board charging , DC-DC converters, and powertrain inverters for automotive power conversion. 

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