This article highlights EiceDRIVER™ portfolio with a 1200 V three-phase gate driver that is based on the company’s unique silicon-on-insulator (SOI) technology.

Munich, Germany – Infineon Technologies AG broadens its level-shift EiceDRIVER™ portfolio with a 1200 V three-phase gate driver. It is based on the company’s unique silicon-on-insulator (SOI) technology. The device provides leading negative VS transient immunity, superior latch-up immunity, fast over-current protection, and the monolithic integration of real bootstrap diodes. These unique features reduce BOM and enable a more robust design with a compact form factor suitable for industrial drives and embedded inverter applications.

For more information visit https://eepower.com/new-industry-products/infineons-1200v-level-shift-three-phase-soi-eicedriver/