Transphorm announced its second 900 V GaN FET is now in production. The TP90H050WS offers a typical on-resistance of 50 milliohms with a one kilovolt transient spike rating and is now JEDEC qualified. The primary target markets are broad industrial and renewable energy, including applications such as photovoltaic inverters, battery charging, uninterruptable power supplies, lighting and energy storage. Additionally, with the 900 V portfolio, Transphorm is working its way up the voltage range to include three phase applications.

Introduced last year, the TP90H050WS is the company’s second 900 V device following the TP90H180PS. The two-chip normally-off power transistor delivers a ±20 V gate robustness in a standard TO-247 package, increasing its reliability and designability for power systems. The combination of Transphorm’s high-speed GaN and the thermally robust TO-247 package enables systems to reach greater than 99 percent efficiency while generating up to 10 kW of power in typical half bridge configurations with bridgeless totem-pole power factor correction (PFC).

Illinois Institute of Technology (IIT) is currently working with the TP90H050WS in an ARPA-E CIRCUITS program that uniquely brought together Transphorm’s leading edge product with IIT’s innovative solid state switching topologies. The project will generate reliable solid-state circuit breaker (SSCBs) for renewable energy microgrids. It includes developing an autonomously operated, programmable, and intelligent bi-directional SSCB using the 900 V GaN devices.

Transphorm continues to simplify development efforts with its DC to AC inverter evaluation board. Designed using four TP90H180PS 170 milliohm FETs, the TDINV3500P100-KIT uses a full bridge topology to support single-phase inverter systems operating at or above 100 kHz.

News source:  https://www.powerelectronicsnews.com/transphorm-second-900-v-gan-fet-is-now-in-production/