The key for the next essential step towards an energy-efficient world lies in the use of new materials, such as wide bandgap semiconductors which allow for greater power efficiency, smaller size, lighter weight, lower overall cost – or all of these together. Silicon (Si), silicon carbide (SiC), insulated-gate bipolar transistor (IGBT) and gallium nitride (GaN) devices, is the customer’s first choice in all segments.

SiC - revolution to rely on in high voltage segments
Silicon carbide (SiC) has a wide bandgap of 3 electronvolt (eV) and a much higher thermal conductivity compared to silicon. SiC based MOSFETs are most suited for high breakdown, high power applications that operate at high frequency. Compared to silicon, the device parameters such as for example the RDS(on) change less with temperature. This allows designers to work within tighter margins in their designs, allowing extra performance to be delivered. 

GaN - bringing Gallium Nitride (GaN) technology to the next level
GaN has an even higher bandgap (3.4 electronvolt) and substantially higher electron mobility than SiC. Compared to silicon (Si), the breakdown field is ten times higher and the electron mobility is double. Both the output charge and gate charge are ten times lower than with Si, and the reverse recovery charge is almost zero which is key for high frequency operations. GaN is the technology of choice in modern resonant topologies that enables and is enabling new approaches, including new topologies and current modulation. GaN gallium nitride products focus on high performance and robustness, and add significant value to a broad variety of systems across many applications such as server, telecom, wireless charging, adapterand charger, and audio. 

https://www.infineon.com/cms/en/product/power/wide-band-gap-semiconductors-sic-gan/