It is wide bandgap (WBG) technology that is providing the answers as power converter designers search for approaches to attain a further single percentage point of efficiency and increase the power density of their designs. Gallium nitride (GaN) transistors are increasingly becoming the solution but, like their silicon counterparts, single devices still have upper limits to their current handling capability. Use of such devices in parallel is a common approach, but engineers can’t simply swap out silicon MOSFETs for GaN devices (GaN Transistors).

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