High-Speed 1x nm STT-MRAM
Date:2020-06-23 03:19:11 Posted by:coowa View:424Researchers at Tohoku University have announced their development of a Magnetic Tunnel Junction (MTJ) with an access time of 10ns with features as small as 1x nm. What is MRAN, and how will it play a role in future electronics?
For more information visit https://www.electropages.com/blog/2020/06/high-speed-1x-nm-stt-mram
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